TN5335K1-G

晶体管, MOSFET, DMOS, N沟道, 110 mA, 350 V, 15 ohm, 10 V, 2 V

N-Channel 350V 110mA Tj 360mW Ta Surface Mount SOT-23 TO-236AB

得捷:
MOSFET N-CH 350V 0.11A SOT23-3

欧时:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V

立创商城:
TN5335K1-G

e络盟:
晶体管, MOSFET, DMOS, N沟道, 110 mA, 350 V, 15 ohm, 10 V, 2 V

艾睿:
Create an effective common drain amplifier using this TN5335K1-G power MOSFET from Microchip Technology. Its maximum power dissipation is 360 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V, 15 Ohm3 SOT-23 T/R

安富利:
Trans MOSFET N-CH 350V 0.11A 3-Pin SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 350V; 0.75A; 360mW; SOT23-3

Verical:
Trans MOSFET N-CH Si 350V 0.11A 3-Pin SOT-23 T/R