STX13003G-AP

STX13003G-AP概述

TO-92 NPN 400V 1A

Bipolar BJT Transistor NPN 400V 1A 1.5W Through Hole TO-92AP


得捷:
TRANS NPN 400V 1A TO92AP


艾睿:
Compared to other transistors, the NPN STX13003G-AP general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.


Chip1Stop:
Trans GP BJT NPN 400V 1A 3-Pin TO-92 Ammo


STX13003G-AP数据文档
型号 品牌 下载
STX13003G-AP

ST Microelectronics 意法半导体

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STX117-AP

ST Microelectronics 意法半导体

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STX13003G

ST Microelectronics 意法半导体

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STX13003

ST Microelectronics 意法半导体

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STX13004G-AP

ST Microelectronics 意法半导体

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STX13004

ST Microelectronics 意法半导体

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STX13004-AP

ST Microelectronics 意法半导体

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STX13003-AP

ST Microelectronics 意法半导体

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STX13005G-AP

ST Microelectronics 意法半导体

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STX1F10

ST Microelectronics 意法半导体

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STX13004G

ST Microelectronics 意法半导体

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