IPB035N08N3GATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB035N08N3GATMA1, 100 A, Vds=80 V, 3引脚 D2PAK TO-263封装

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 80V 100A D2PAK

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB035N08N3GATMA1, 100 A, Vds=80 V, 3引脚 D2PAK TO-263封装

e络盟:
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB035N08N3GATMA1 power MOSFET. Its maximum power dissipation is 214000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 80V 100A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3

Verical:
Trans MOSFET N-CH 80V 100A Automotive 3-Pin2+Tab D2PAK T/R