肖特基势垒(双)二极管 Schottky barrier double diodes
反向电压Vr
Reverse VoltageVr | 30V
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平均整流电流Io
Average Rectified CurrentIo | 200MA/0.2A
最大正向压降VF
Forward VoltageVf | 800MV/0.8V
结电容值Cj
Junction capacitanceCj |
耗散功率
Pd Power Dissipation | 250MW/0.25W
Description & Applications | FEATURES
• Low forward voltage
• Guard ring protected
• Small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SC59 small plastic SMD package. Single diodes and double diodes with different pinning are available.
描述与应用 | 特性
应用程序
型号 | 品牌 | 下载 |
---|---|---|
1PS59SB10 | NXP 恩智浦 | 下载 |
1PS59SB14,115 | NXP 恩智浦 | 下载 |
1PS59SB15,115 | NXP 恩智浦 | 下载 |
1PS59SB16,115 | NXP 恩智浦 | 下载 |