BULB49DT4

高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor

• Typical application 220V mains unless otherwise specified

• Integrated antisaturation and protection network

• According to tube impedance

   120V AC mains

   277V AC mains

   340V AC mains

   As PFC 220V AC mains

 Suffix D = Integrated free-wheeling diode

 ST preferred products in bold

 Devices in green to be used in pairs

得捷:
TRANS NPN 450V 5A D2PAK

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BULB49DT4 GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 10 V. Its maximum power dissipation is 80000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

安富利:
Trans GP BJT NPN 450V 5A 3-Pin2+Tab D2PAK T/R

Chip1Stop:
Trans GP BJT NPN 450V 5A 3-Pin2+Tab D2PAK T/R