单晶体管, IGBT, 120 A, 1.65 V, 395 W, 650 V, TO-247, 3 引脚
Summary of Features:
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650V breakthrough voltage
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Compared to
’s Best-in-class HighSpeed 3 family
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Factor 2.5 lower Q g
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Factor 2 reduction in switching losses
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200mV reduction in V CEsat
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Low C OES/E OSS
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Mild positive temperature coefficient V CEsat
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Temperature stability of V f
Benefits:
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Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
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50V increase in the bus voltage possible without compromising reliability
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Higher power density design
Target Applications:
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Uninterruptible Power Supplies
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Welding