N沟道600V - 20A - TO- 220中频的PowerMESH IGBT N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT
IGBT - 600 V 40 A 130 W 通孔 TO-220
得捷:
IGBT 600V 40A 130W TO220
艾睿:
The STGP19NC60S IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 130000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Chip1Stop:
Trans IGBT Chip N-CH 600V 40A 3-Pin3+Tab TO-220 Tube
DeviceMart:
IGBT N-CH 600V 20A TO-220
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGP19NC60S | ST Microelectronics 意法半导体 | 下载 |
| STGP10NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGP3NC120HD | ST Microelectronics 意法半导体 | 下载 |
| STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
| STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
| STGP35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
| STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGP40V60F | ST Microelectronics 意法半导体 | 下载 |