BSS123,215数据手册PDF_BSS123,215中文资料-锐单商城

BSS123,215概述

NXP BSS123,215 晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V

The BSS123 from is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line drivers, telephone ringer and relay drivers.

.: Drain to source voltage Vds of 100V

.: Gate to source voltage of ±20V

.: Continuous drain current Id of 150mA

.: Power dissipation Pd of 250mW

.: Operating junction temperature range from -55°C to 150°C

BSS123,215详细参数

BSS123,215数据文档

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