Trans IGBT Chip N-CH 1700V 32A 190000mW 3Pin2+Tab TO-268
This IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
得捷:
IGBT 1700V 32A 190W TO268
贸泽:
IGBT Transistors 32 Amps 1700 V 3.5 V Rds
艾睿:
Trans IGBT Chip N-CH 1.7KV 32A 3-Pin2+Tab TO-268
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGT16N170 | IXYS Semiconductor | 下载 |
| IXGT60N60 | IXYS Semiconductor | 下载 |
| IXGT60N60B2 | IXYS Semiconductor | 下载 |
| IXGT60N60C2 | IXYS Semiconductor | 下载 |
| IXGT30N60B2 | IXYS Semiconductor | 下载 |
| IXGT30N60B2D1 | IXYS Semiconductor | 下载 |
| IXGT30N60C2 | IXYS Semiconductor | 下载 |
| IXGT30N60C2D1 | IXYS Semiconductor | 下载 |
| IXGT40N60B2 | IXYS Semiconductor | 下载 |
| IXGT40N60B2D1 | IXYS Semiconductor | 下载 |
| IXGT40N60C2 | IXYS Semiconductor | 下载 |