STB10NK60ZT4

STMICROELECTRONICS  STB10NK60ZT4  功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

### MOSFET ，STMicroelectronics

立创商城:
N沟道 600V 10A

得捷:
MOSFET N-CH 600V 10A D2PAK

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STB10NK60ZT4, 10 A, Vds=600 V, 3引脚

e络盟:
晶体管, MOSFET, N沟道, 4.5 A, 600 V, 0.65 ohm, 10 V, 3.75 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics&s; STB10NK60ZT4 power MOSFET can provide a solution. Its maximum power dissipation is 115000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 600V 10A 3-Pin2+Tab D2PAK T/R

Chip1Stop:
Trans MOSFET N-CH 600V 10A 3-Pin2+Tab D2PAK T/R

Verical:
Trans MOSFET N-CH 600V 10A 3-Pin2+Tab D2PAK T/R

Newark:
# STMICROELECTRONICS  STB10NK60ZT4  Power MOSFET, N Channel, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V

DeviceMart:
MOSFET N-CH 600V 10A D2PAK

Win Source:
MOSFET N-CH 600V 10A D2PAK