BC847CWT3G

BC847CWT3G概述

双极晶体管 - 双极结型晶体管BJT GENRL TRANSISTOR

Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

BC847CWT3G数据文档
型号 品牌 下载
BC847CWT3G

ON Semiconductor 安森美

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BC847CLT1G

ON Semiconductor 安森美

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BC846ALT1G

ON Semiconductor 安森美

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BC846BW

NXP 恩智浦

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BC846BDW1T1G

ON Semiconductor 安森美

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BC846BLT3G

ON Semiconductor 安森美

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BC846BMTF

Fairchild 飞兆/仙童

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BC846S,125

NXP 恩智浦

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BC846BLT1G

ON Semiconductor 安森美

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BC847BS

NXP 恩智浦

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BC846BWT1G

ON Semiconductor 安森美

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