IPD60R600P6ATMA1

IPD60R600P6ATMA1概述

IPD60R600P6ATMA1 编带

Summary of Features:

.
Reduced gate charge Q g
.
Higher V th
.
Good body diode ruggedness
.
Optimized integrated R g
.
Improved dv/dt from 50V/ns
.
CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits:

.
Improved effciency especially in light load condition
.
Better efficiency in soft switching applications due to earlier turn-off
.
Suitable for hard- & soft-switching topologies
.
Optimized balance of efficiency and ease of use and good controllability of switching behavior
.
High robustness and better efficiency
.
Outstanding quality & reliability
IPD60R600P6ATMA1数据文档
型号 品牌 下载
IPD60R600P6ATMA1

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