低边 IGBT MOSFET 灌:9A 拉:9A
Change state in a high power transistor by implementing this power driver by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXDD609CI | IXYS Semiconductor | 下载 |
| IXDD509D1T/R | IXYS Semiconductor | 下载 |
| IXDD504SIAT/R | IXYS Semiconductor | 下载 |
| IXDD504D2T/R | IXYS Semiconductor | 下载 |
| IXDD609D2TR | IXYS Semiconductor | 下载 |
| IXDD609PI | IXYS Semiconductor | 下载 |
| IXDD630YI | IXYS Semiconductor | 下载 |
| IXDD609SIA | IXYS Semiconductor | 下载 |
| IXDD604SIA | IXYS Semiconductor | 下载 |
| IXDD604PI | IXYS Semiconductor | 下载 |
| IXDD614PI | IXYS Semiconductor | 下载 |