2SJ222-E数据手册PDF_2SJ222-E中文资料-锐单商城

2SJ222-E概述

硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device

-Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Chip1Stop:
Trans MOSFET P-CH 100V 20A 3-Pin3+Tab TO-220FM Box

2SJ222-E数据文档