SQD19P06-60L-GE3

VISHAY  SQD19P06-60L-GE3  晶体管, MOSFET, P沟道, -20 A, -60 V, 0.046 ohm, -10 V, -1.5 V

The is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature and low thermal resistance.

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AEC-Q101 Qualified

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100% Rg Tested

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100% UIS Tested

得捷:
MOSFET P-CH 60V 20A TO252

艾睿:
Trans MOSFET P-CH 60V 20A Automotive 3-Pin2+Tab TO-252AA T/R

富昌:
单 P-沟道 60 V 0.055 Ohm 46 W 表面贴装 功率 MosFet - TO-252-3

Verical:
Trans MOSFET P-CH 60V 20A