BSZ086P03NS3GATMA1

INFINEON  BSZ086P03NS3GATMA1  晶体管, MOSFET, BRT, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSZ086P03NS3GATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

得捷:
MOSFET P-CH 30V 13.5A/40A TSDSON

立创商城:
P沟道 30V 13.5A 40A

贸泽:
MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3

e络盟:
功率场效应管, MOSFET, BRT, P沟道, 30 V, 40 A, 0.0065 ohm, TSDSON, 表面安装

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSZ086P03NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 69000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

安富利:
Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R

Chip1Stop:
Trans MOSFET P-CH 30V 13.5A Automotive 8-Pin TSDSON EP

TME:
Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8

Verical:
Trans MOSFET P-CH 30V 13.5A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ086P03NS3GATMA1  Bipolar Pre-Biased / Digital Transistor, BRT, P Channel, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V