RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD55035-E | ST Microelectronics 意法半导体 | 下载 |
| PD55003L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55003TR-E | ST Microelectronics 意法半导体 | 下载 |