SIC779CD-T1-GE3

VISHAY  SIC779CD-T1-GE3  芯片, MOSFET, 高压侧和低压侧, 3V-16V电源, 20ns延迟, POWERPAK-40

The is an integrated DrMOS Power Stage Solution optimized for high frequency buck applications. Operating frequencies in excess of 1MHz can easily be achieved. It contains PWM optimized n-channel MOSFETs high-side and low-side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC779 delivers up to 40A continuous output current and operates from an input voltage range of 3 to 16V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 to 2V with a nominal input voltage of 12V. The device can also deliver very high power at 5V output for ASIC applications. It incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller and converts it into the high-side and low-side MOSFET gate drive signals.

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Industry benchmark Gen III MOSFETs with integrated Schottky diode

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DrMOS compliant gate driver IC

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Enables Vcore switching at 1MHz

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Easily achieve >93% efficiency in multi-phase, low output voltage solutions

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Low ringing on the VSWH pin reduces EMI

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Pin-compatible with DrMOS 6 x 6 version 4.0

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Tri-state PWM input function prevents negative output voltage swing

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5V Logic levels on PWM

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MOSFET threshold voltage optimized for 5V driver bias supply

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Automatic skip mode operation SMOD for light load efficiency

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Under-voltage lockout

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Built-in bootstrap Schottky diode

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Adaptive deadtime and shoot through protection

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Thermal shutdown warning flag