SIHU7N60E-GE3

VISHAY  SIHU7N60E-GE3  功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.

.

Low figure-of-meritFOM RON x Qg

.

Low input capacitance CISS

.

Reduced switching and conduction losses

.

Ultra low gate charge

.

Avalanche energy rated

.

Halogen-free