MTD20N06HDT4

功率MOSFET 20安培， 60伏特N沟道DPAK Power MOSFET 20 Amps, 60 Volts N−Channel DPAK

Power MOSFET 20 Amps, 60 Volts N−Channel DPAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

•Avalanche Energy Specified

•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

•Diode is Characterized for Use in Bridge Circuits

•IDSSand VDSonSpecified at Elevated Temperature