512k x 8位低功耗/低电压 COMS SRAM,工业级温度范围
DESCRIPTION
The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.25uA at 3.0V/25°C and maximum access time of 55ns at 3.0V/85°C.
FEATURES
• Wide VCC operation voltage : 2.4V ~ 5.5V
• Very low power consumption:
VCC = 3.0V Operationcurrent : 30mA Max. at 55ns
2mA Max. at 1MHz
Standby current : 0.25uA Typ. at 25OC
VCC = 5.0V Operationcurrent : 70mA Max. at 55ns
10mA Max. at 1MHz
Standby current : 1.5uA Typ. at 25OC
• Highspeed access time:
-55 55ns Max. at VCC=3.0~5.5V
-70 70ns Max. at VCC=2.7~5.5V
• Automatic power down whenchip is deselected
型号 | 品牌 | 下载 |
---|---|---|
BS62LV4006SIP55 | BSI | 下载 |
BS62LV256SCG70 | BSI | 下载 |
BS62LV256SIP55 | BSI | 下载 |
BS62LV4006EIP55 | BSI | 下载 |
BS62LV1027TIP55 | BSI | 下载 |
BS62LV1027SIP55 | BSI | 下载 |
BS62LV256PIP55 | BSI | 下载 |
BS62LV4006STIP55 | BSI | 下载 |
BS62LV8001EIP55 | BSI | 下载 |
BS62LV1600EIP55 | BSI | 下载 |
BS62LV256TIP55 | BSI | 下载 |