UCC37323DR

UCC37323DR概述

双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers

低端 栅极驱动器 IC 反相 8-SOIC


得捷:
IC DUAL HS POWER FET DRIVR 8SOIC


立创商城:
低边 MOSFET 灌:4A 拉:4A


德州仪器TI:
4-A/4-A dual-channel gate driver with inverting inputs


艾睿:
Correctly change the biasing voltage to a high power transistor by using this UCC37323DR power driver by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 1140 mW. Its maximum power dissipation is 1140 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This gate driver has an operating temperature range of 0 °C to 70 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V.


安富利:
MOSFET DRVR 4.5A 2-OUT Lo Side Inv 8-Pin SOIC T/R


Chip1Stop:
Driver 4.5A 2-OUT Low Side Inv 8-Pin SOIC T/R


Verical:
Driver 4.5A 2-OUT Low Side Inv 8-Pin SOIC T/R


Win Source:
IC DUAL HS POWER FET DRIVR 8SOIC


UCC37323DR数据文档
型号 品牌 下载
UCC37323DR

TI 德州仪器

下载
UCC3895EVM-001

TI 德州仪器

下载
UCC3916DP

TI 德州仪器

下载
UCC3804DTR

TI 德州仪器

下载
UCC3973PW

TI 德州仪器

下载
UCC3915DP

TI 德州仪器

下载
UCC3921D

TI 德州仪器

下载
UCC3918DP

TI 德州仪器

下载
UCC3837D

TI 德州仪器

下载
UCC3837DG4

TI 德州仪器

下载
UCC3817APW

TI 德州仪器

下载

锐单商城 - 一站式电子元器件采购平台