BSC0921NDIATMA1

BSC0921NDIATMA1 编带

MOSFET - 阵列 2 N 沟道（双）非对称型 30V 17A，31A 1W 表面贴装型 PG-TISON-8

欧时:
Infineon MOSFET BSC0921NDI

得捷:
MOSFET 2N-CH 30V 17A/31A TISON8

立创商城:
双N沟道配对 30V 31A 17A

e络盟:
双路场效应管, MOSFET, N沟道, 30 V, 40 A, 3.9 ohm, TISON, 表面安装

艾睿:
Use Infineon Technologies&s; BSC0921NDIATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; PG-TISON-8

Verical:
Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R