BSC050N03MSGATMA1

晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V

表面贴装型 N 通道 16A（Ta），80A（Tc） 2.5W（Ta），50W（Tc） PG-TDSON-8-5

得捷:
MOSFET N-CH 30V 16A/80A TDSON

e络盟:
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 1 V

艾睿:
Make an effective common source amplifier using this BSC050N03MSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 30V 16A 8-Pin TDSON T/R

富昌:
N-沟道 30 V 80 A 5 mΩ 34 nC 表面贴装 OptiMOS 功率 Mosfet - TDSON-8

TME:
Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 16A 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 30V 80A TDSON-8