IXA60IF1200NA

IXYS SEMICONDUCTOR  IXA60IF1200NA  单晶体管, IGBT, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 引脚

IGBT 分立元件，IXYS XPT 系列

IXYS 的 XPT™ 系列分立件 IGBT 采用超轻穿通薄芯片技术，可降低热电阻和能源损耗。 这些设备提供快速切换时间，具有低尾线电流，并提供各种工业标准和专有封装。

高功率密度和低 VCEsat

方形反向偏置安全工作区域 RBSOA 高达额定击穿电压

短路容量，确保 10usec

正向通态电压温度系数

可选 Co-Pack Sonic-FRD™ 或 HiPerFRED™ 二极管

国际标准和专有高电压封装

得捷:
IGBT MOD 1200V 88A 290W SOT227B

欧时:
IXYS IXA60IF1200NA N沟道 IGBT, Vce=1200 V, 88 A, 4引脚 SOT-227B封装

e络盟:
单晶体管, IGBT, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 引脚

艾睿:
This powerful and secure IXA60IF1200NA IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 290000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.

Chip1Stop:
Trans IGBT Chip N-CH 1200V 88A 290000mW 4-Pin SOT-227B Tube

Newark:
IGBT Single Transistor, 88 A, 1.8 V, 290 W, 1.2 kV, SOT-227B, 4 Pins