IXTT30N60L2

IXTT30N60L2概述

N沟道 600V 30A

N-Channel 600V 30A Tc 540W Tc Surface Mount TO-268


得捷:
MOSFET N-CH 600V 30A TO268


立创商城:
N沟道 600V 30A


艾睿:
This IXTT30N60L2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 540000 mW. This device utilizes linear l2 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


Verical:
Trans MOSFET N-CH 600V 30A 3-Pin2+Tab TO-268


DeviceMart:
MOSFET N-CH 30A 600V TO-268


IXTT30N60L2数据文档
型号 品牌 下载
IXTT30N60L2

IXYS Semiconductor

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IXTT1N100

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IXTT28N50Q

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IXTT50N30

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IXTT40N50L2

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IXTT12N140

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IXTT30N50L2

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IXTT36P10

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IXTT88N15

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IXTT26N60P

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