C1220X5R1A474K

C1220X5R1A474K概述

多层陶瓷电容器MLCC - SMD/SMT 0508 0.47uF 10volts X5R 10%

• Positioning the electrodes along the length of the chip device, reduces ESR and ESL components over conventional products.

• Provides high frequency noise suppression effect because the resonating frequency is high.

• Flipped geometry provides low inductance less than 400 pH.

• Provides stabilization of power line voltage.

• Suitable for IC decoupling application.


得捷:
CAP CER 0.47UF 10V X5R 0508


贸泽:
多层陶瓷电容器MLCC - SMD/SMT 0508 0.47uF 10volts X5R 10%


C1220X5R1A474K数据文档
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