晶体管 双极-射频, NPN, 12 V, 11 GHz, 450 mW, 40 mA, 95 hFE
Superior characteristics of this RF amplifier from Semiconductors make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
得捷:
NPN WIDEBAND SILICON RF TRANSIST
e络盟:
晶体管 双极-射频, NPN, 12 V, 11 GHz, 450 mW, 40 mA, 95 hFE
艾睿:
Trans RF BJT NPN 16V 0.065A 450mW Automotive 4-Pin3+Tab SOT-143B T/R
安富利:
Trans GP NPN 12V 0.04A 4-Pin SOT-143B T/R
Verical:
Trans RF BJT NPN 16V 0.065A 450mW Automotive 4-Pin3+Tab SOT-143B T/R