MRFE6S9160HSR3

RF Power Transistor,865 to 960MHz, 160W, Typ Gain in dB is 21 @ 880MHz, 28V, LDMOS, SOT1793

Overview

The MRFE6S9160HR3 and are designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.

MoreLess

## Features

* Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain: 21 dB

Drain Efficiency: 31%

ACPR @ 750 kHz Offset: –46.8 dBc in 30 kHz Bandwidth

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

## Features