NXP### 双极性晶体管，NXP Semiconductors
The is a 0.25A PNP breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package.
-
.
-
High voltage
-
.
-
Low collector-emitter saturation voltage VCEsat
-
.
-
High collector current capability IC and ICM
-
.
-
High collector current gain hFE at high IC
-
.
-
AEC-Q101 qualified
-
.
-
NPN complement is PBHV8540T
-
.
-
W5 Marking code