BUZ30AH3045AATMA1

Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AH3045AATMA1, 21 A, Vds=200 V, 3引脚 D2PAK TO-263封装

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 200V 21A D2PAK

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AH3045AATMA1, 21 A, Vds=200 V, 3引脚 D2PAK TO-263封装

艾睿:
Make an effective common source amplifier using this BUZ30AH3045AATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 200V 21A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO263-3

Verical:
Trans MOSFET N-CH 200V 21A 3-Pin2+Tab TO-263 T/R

Win Source:
MOSFET N-CH 200V 21A TO-263