IXFH20N100P

IXFH20N100P概述

N沟道 1kV 20A

In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.


得捷:
MOSFET N-CH 1000V 20A TO247AD


立创商城:
N沟道 1kV 20A


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFH20N100P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET N-CH 1KV 20A 3-Pin3+Tab TO-247


Win Source:
MOSFET N-CH 1000V 20A TO-247


IXFH20N100P数据文档
型号 品牌 下载
IXFH20N100P

IXYS Semiconductor

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IXFH35N30

IXYS Semiconductor

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IXFH13N50

IXYS Semiconductor

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IXFH160N15T

IXYS Semiconductor

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IXFH26N55Q

IXYS Semiconductor

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IXFH67N10

IXYS Semiconductor

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IXFH30N40Q

IXYS Semiconductor

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IXFH80N08

IXYS Semiconductor

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IXFH13N80Q

IXYS Semiconductor

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IXFH15N60

IXYS Semiconductor

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IXFH22N55

IXYS Semiconductor

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