N沟道 1kV 20A
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
得捷:
MOSFET N-CH 1000V 20A TO247AD
立创商城:
N沟道 1kV 20A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFH20N100P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 1KV 20A 3-Pin3+Tab TO-247
Win Source:
MOSFET N-CH 1000V 20A TO-247
型号 | 品牌 | 下载 |
---|---|---|
IXFH20N100P | IXYS Semiconductor | 下载 |
IXFH35N30 | IXYS Semiconductor | 下载 |
IXFH13N50 | IXYS Semiconductor | 下载 |
IXFH160N15T | IXYS Semiconductor | 下载 |
IXFH26N55Q | IXYS Semiconductor | 下载 |
IXFH67N10 | IXYS Semiconductor | 下载 |
IXFH30N40Q | IXYS Semiconductor | 下载 |
IXFH80N08 | IXYS Semiconductor | 下载 |
IXFH13N80Q | IXYS Semiconductor | 下载 |
IXFH15N60 | IXYS Semiconductor | 下载 |
IXFH22N55 | IXYS Semiconductor | 下载 |