GAP3SLT33-214

GENESIC SEMICONDUCTOR  GAP3SLT33-214  肖特基二极管, 300mA, 3.3KV, DO-214AA

Diode Silicon Carbide Schottky 3300V 300mA DC Surface Mount DO-214AA

得捷:
DIODE SIC 3.3KV 300MA DO214AA

e络盟:
肖特基二极管, 300mA, 3.3KV, DO-214AA

艾睿:
Switch from an AC voltage to a DC voltage using a Schottky diode GAP3SLT33-214 rectifier from GeneSiC Semiconductor. Its maximum power dissipation is 25000 mW. Its peak non-repetitive surge current is 2 A, while its maximum continuous forward current is 0.3 A. It is made in a single configuration. This rectifier has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Newark:
# GENESIC SEMICONDUCTOR  GAP3SLT33-214  Silicon Carbide Schottky Diode, SiC, 3300V Series, Single, 3.3 kV, 300 mA, 52 nC, DO-214AA