Trans IGBT Chip N-CH 900V 100A 543000mW 3Pin3+Tab TO-247
The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 543000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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