1N5817G

ON SEMICONDUCTOR  1N5817G  肖特基整流器, 通用, 单, 20 V, 1 A, DO-204AL, 2 引脚, 450 mV

The is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.

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Cathode indicated by polarity band

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Extremely low VF

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Low stored charge, majority carrier conduction

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Low-power loss/high-efficiency

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All external surfaces corrosion-resistant