ISO高侧智能功率固态继电器 ISO HIGH SIDE SMART POWER SOLID STATE RELAY
DESCRIPTION
The VND10N06, VND10N06-1, and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ LOGIC LEVEL INPUT THRESHOLD
■ ESD PROTECTION
■ SCHMITT TRIGGER ON INPUT
■ HIGH NOISE IMMUNITY
| 型号 | 品牌 | 下载 |
|---|---|---|
| VNP10N06FI | ST Microelectronics 意法半导体 | 下载 |
| VNP14NV04-E | ST Microelectronics 意法半导体 | 下载 |
| VNP14NV04 | ST Microelectronics 意法半导体 | 下载 |
| VNP10N07FI | ST Microelectronics 意法半导体 | 下载 |
| VNP14N04-E | ST Microelectronics 意法半导体 | 下载 |
| VNP14N04 | ST Microelectronics 意法半导体 | 下载 |
| VNP10N06 | ST Microelectronics 意法半导体 | 下载 |
| VNP10N07 | ST Microelectronics 意法半导体 | 下载 |
| VNP10N07FI-E | ST Microelectronics 意法半导体 | 下载 |
| VNP14N04FI | ST Microelectronics 意法半导体 | 下载 |
| VNP10N07-E | ST Microelectronics 意法半导体 | 下载 |