VISHAY VSLY3850 红外发射器, 高速, 18 °, T-1 3mm, 100 mA, 1.9 V, 10 ns, 10 ns
The is a 850nm high speed Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and moulded in a clear. It is suitable for high pulse current operation.