NPN通用放大器晶体管表面贴装 NPN General Purpose Amplifier Transistor Surface Mount
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MSD602-RT1G | ON Semiconductor 安森美 | 下载 |
| MSD601-RT1G | ON Semiconductor 安森美 | 下载 |
| MSD6100RLRA | ON Semiconductor 安森美 | 下载 |
| MSD601-ST1G | ON Semiconductor 安森美 | 下载 |
| MSD602-RT1 | ON Semiconductor 安森美 | 下载 |
| MSD6100 | ON Semiconductor 安森美 | 下载 |
| MSD6100G | ON Semiconductor 安森美 | 下载 |
| MSD6100RLRAG | ON Semiconductor 安森美 | 下载 |
| MSD601-ST1 | ON Semiconductor 安森美 | 下载 |
| MSD601-RT1 | Rochester 罗切斯特 | 下载 |