PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
The PNP general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 3000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 225 V and a maximum emitter base voltage of 6 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N6211 | Microsemi 美高森美 | 下载 |
| 2N6299 | Microsemi 美高森美 | 下载 |
| 2N6284G | ON Semiconductor 安森美 | 下载 |
| 2N6292G | ON Semiconductor 安森美 | 下载 |
| 2N6288G | ON Semiconductor 安森美 | 下载 |
| 2N6287G | ON Semiconductor 安森美 | 下载 |
| 2N6287 | ST Microelectronics 意法半导体 | 下载 |
| 2N6284 | ST Microelectronics 意法半导体 | 下载 |
| 2N6294 | Central Semiconductor | 下载 |
| 2N6295 | Central Semiconductor | 下载 |
| 2N6297 | Central Semiconductor | 下载 |