IXFB44N100P

IXFB44N100P概述

通孔 N 通道 1000V 44A(Tc) 1250W(Tc) PLUS264™

Compared to traditional transistors, power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

IXFB44N100P数据文档
型号 品牌 下载
IXFB44N100P

IXYS Semiconductor

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IXFB132N50P3

IXYS Semiconductor

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IXFB210N30P3

IXYS Semiconductor

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IXFB52N90P

IXYS Semiconductor

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IXFB110N60P3

IXYS Semiconductor

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IXFB30N120P

IXYS Semiconductor

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IXFB120N50P2

IXYS Semiconductor

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IXFB38N100Q2

IXYS Semiconductor

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IXFB40N110P

IXYS Semiconductor

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IXFB82N60Q3

IXYS Semiconductor

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IXFB60N80P

IXYS Semiconductor

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