FQP13N10

FQP13N10概述

FAIRCHILD SEMICONDUCTOR  FQP13N10  晶体管, MOSFET, N沟道, 12.8 A, 100 V, 0.142 ohm, 10 V, 4 V

The is a 100V N-channel QFET® enhancement mode Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.

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Low gate charge
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100% Avalanche tested
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Improved system reliability in PFC and soft switching topologies
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Switching loss improvements
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Lower conduction loss
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175°C Maximum junction temperature rating
FQP13N10数据文档
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FQP13N10

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