TPC6106

TPC6106 P沟道MOS场效应管 -40V -3.9A 75毫欧 SOT-163 marking/标记 S3F 便携式设备应用 低漏电流 低导通电阻

最大源漏极电压VdsDrain-Source Voltage| -40V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -3.9A 源漏极导通电阻RdsDrain-Source On-State Resistance| 75mΩ@ VGS = -10V, ID = -1.9A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.85~-2.0V 耗散功率PdPower Dissipation| 2.2W Description & Applications| TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS ON = 58 mΩ typ. • High forward transfer admittance: |Yfs| = 5.5 S typ. • Low leakage current: IDSS = −10 μA max VDS = −40 V • Enhancement model: Vth = −0.8 to −2.0 V VDS = −10 V, ID = −1 mA 描述与应用| 场效应晶体管硅P沟道MOS类型（U-MOS II） 笔记本电脑应用 便携式设备的应用 •由于占地面积小，小而薄的包装 •低漏源导通电阻RDS（ON）=58mΩ（典型值） •高正向转移导纳：| YFS|= 5.5 S（典型值） •低漏电流IDSS= -10μA（最大）（VDS=-40 V） •增强型号：Vth= -0.8到-2.0 V （VDS= -10 V，ID=-1毫安）