FGA25N120ANTD

FAIRCHILD SEMICONDUCTOR  FGA25N120ANTD  单晶体管, IGBT, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚

The from is a 1200V, 25A NPT Trench IGBT in through hole TO-3P package. IGBT offers superior conduction, switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application.

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Collector emitter voltage VCES is 1.2KV

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Collector current at 25°C is 50A

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Diode continuous forward current at 25°C is 50A

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Operating junction temperature range from - 55°C to 150°C

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Maximum power dissipation at 25°C is 312W

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Collector to emitter saturation voltage is 2.65V at IC = 50 A

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Maximum diode forward voltage is 3V at IF = 25A

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Diode peak reverse recovery current is 40A