IXYS SEMICONDUCTOR IXFK64N60P 功率场效应管, MOSFET, 极性FET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V
If you need to either amplify or switch between signals in your design, then Ixys Corporation"s power MOSFET is for you. Its maximum power dissipation is 1040000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
得捷:
MOSFET N-CH 600V 64A TO264AA
立创商城:
N沟道 600V 64A
e络盟:
晶体管, MOSFET, 极性FET, N沟道, 64 A, 600 V, 0.096 ohm, 10 V, 5 V
艾睿:
Trans MOSFET N-CH 600V 64A 3-Pin3+Tab TO-264AA
Verical:
Trans MOSFET N-CH 600V 64A 3-Pin3+Tab TO-264AA
DeviceMart:
MOSFET N-CH 600V 64A TO-264
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXFK64N60P | IXYS Semiconductor | 下载 |
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| IXFK32N80P | IXYS Semiconductor | 下载 |
| IXFK48N50 | IXYS Semiconductor | 下载 |