Trans IGBT Chip N-CH 600V 110A 284000mW 3Pin3+Tab TO-247 Tube
This fast-switching IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 284000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
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