IPB60R160C6ATMA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

CoolMOS™C6/C7 功率 MOSFET

得捷:
MOSFET N-CH 600V 23.8A D2PAK

欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPB60R160C6ATMA1, 24 A, Vds=600 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6

艾睿:
This IPB60R160C6ATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 176000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.

TME:
Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3

Verical:
Trans MOSFET N-CH 600V 23.8A 3-Pin2+Tab D2PAK T/R