15A , 80V , 0.140欧姆,逻辑电平, N沟道功率MOSFET 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET
15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET
The is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages.
Features
• 15A, 80V
•rDSON= 0.140Ω
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly from Q-MOS, N-MOS, TTL Circuits
• SOA is Power Dissipation Limited
• 175oC Rated Junction Temperature
• Logic Level Gate
• High Input Impedance
• Related Literature
\- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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