PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
If you require a general purpose BJT that can handle high voltages, then the PNP BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JANTX2N3467 | Microsemi 美高森美 | 下载 |
| JANTX2N2905A | Microsemi 美高森美 | 下载 |
| JANTX2N2907AUA | Microsemi 美高森美 | 下载 |
| JANTX2N2920 | Microsemi 美高森美 | 下载 |
| JANTX1N5305-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019 | Microsemi 美高森美 | 下载 |
| JANTX1N5310-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019S | Microsemi 美高森美 | 下载 |
| JANTX1N5314-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |