FDS6892A

FAIRCHILD SEMICONDUCTOR  FDS6892A  双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 18 mohm, 4.5 V, 900 mV

The is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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±12V Gate to source voltage

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7.5A Continuous drain current

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30A Pulsed drain current