IPB014N06NATMA1

INFINEON  IPB014N06NATMA1  晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V 新

OptiMOS™5 功率 MOSFET

得捷:
MOSFET N-CH 60V 34A/180A TO263-7

欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB014N06NATMA1, 180 A, Vds=60 V, 7引脚 D2PAK TO-263封装

立创商城:
N沟道 60V 180A 34A

e络盟:
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB014N06NATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7

Verical:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab D2PAK T/R

Newark:
MOSFET, N-CH, 60V, 180A, TO-263-7